Fabrication and characterization of (Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films by flash evaporated deposition
نویسندگان
چکیده
Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films on glass substrates are fabricated by a flash evaporated deposition method. In order to enhance the performance of the thin films, annealing in an argon atmosphere is carried out for 1 hour in the temperature range from 200 to 400 C. The structure of the thin films, in terms of homogeneity and crystalline quality, is investigated by means of x-ray mapping and x-ray diffraction pattern respectively. The cross-sectional microstructure is examined using scanning electron microscopy. We confirm that as-grown (Bi2Te3)0.2(Sb2Te3)0.8 compounds thin film has mostly homogeneous structure except the portion of sticking particles. The crystalline quality of the thin films is improved and the size of crystal grains is grown up to the same size of the film thickness as higher annealing temperature. The transport properties of the thin films, in terms of the electrical resistivity, Seebeck coefficient and thermoelectric power factor are determined at room temperature. By optimization of annealing conditions, it is possible to obtain the high-performed thin film with a thermoelectric power factor of 12.2 μW cm K. We consider that the performance of the thin films are enhanced for optimized annealing because electrons can pass through smoothly in the thin films for the grain growing as well as the reduction of crystal boundaries.
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